Radiation-induced reactions in novolak-based chemically amplified resists.

3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors

Three-dimensional concentration dependent diffusions and simultaneous chemical reactions in chemically-amplified photoresists are simulated. Fickian, a linearly increasing diffusivity and an exponentially increasing diffusivity due to free volume increase with T-BOC are considered. Two different grid to processor mappings are proposed in implementing the simulator on massively parallel processo...

Acid-Quencher Reaction-Diffusion during the Post-Exposure Bake of Chemically Amplified Resists Part 1: Initially linear concentration profiles

High aspect ratio micro/nano machining with proton beam writing on aqueous developable – easily stripped negative chemically-amplified resists

Proton beam writing (PBW) is a new direct-writing process that uses a focused beam of MeV protons to pattern resist material at nano dimensions. PBW has the unique ability to maintain a straight path through 50 lm thick resist films, and is suitable for high aspect ratio micro(nano)-machining. TADEP resist is a new promising high aspect ratio chemically-amplified resist that can be developed in...

Calibration of Chemically Amplified Resist Models

Direct measurement of the reaction front in chemically amplified photoresists.

The continuing drive by the semiconductor industry to fabricate smaller structures using photolithography will soon require dimensional control at length scales comparable to the size of the polymeric molecules in the materials used to pattern them. The current technology, chemically amplified photoresists, uses a complex reaction-diffusion process to delineate patterned areas with high spatial...